| 摘要 |
The wiring method of a bipolar electrode in the mfr. of a semiconductor device is characterized by (a) forming a n-type impurity-doped polysilicon on the surface of a base region(5), and removing the polysilicon except of an emitter region to form a emitter polyelectrode wire(8), (b) diffusing the n-type impurity of the wire(8) to form an emitter(6) under the wire(8), and forming an oxide film(9) on the surface of wire(8) and the base region(5), and (c) removing the oxide film(9) except of the wire region(8), and depositing a metal on the surface of the film(9) and the base region(5) to form a base metal wire(10).
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