FORMING METHOD OF SELF ALIGNED CONTACT FOR SEMICONDUCTOR DEVICE

摘要

forming a contact mask by storing a first nitride film, oxide film and polysilicon film after forming a gate electrode on a silicon substrate; storing the second nitride film on top of that after eliminating the mask by leaving the topology part of the oxide film where the contact hole between the gate electrode is formed when etching the polysilicon film and oxide film using the contact mask; eliminating the left oxide film of topology part by wet etching after leaving the second nitride film on the side of oxide film by blanket etching; and forming a contact hole by eliminating the second nitride film and the first nitride film by the wet etching.