CONTACT HOLE FORMING METHOD

摘要

The contact hole for connecting a metal lead to a semiconductor substrate is provided by forming a contact zone on the surface of the substrate, connected to the metal lead and forming a channel in the contact zone. The side walls of the contact zone are insulated from a conductive layer. A contact section of a metal boundary layer is applied to the base and side walls of the channel, and the entire substrate surface is coated with an insulation layer. The contact hole is provided by selective removal of the insulation layer above the groove, and the inserted metal lead is in contact with the boundary layer.