WAFER DIRECT CONNECTING METHOD BY RAPID THERMAL PROCESSING

摘要

contacting dried two wafers by placing in a reaction tubes(2) horizontally in which a number of lamps(1) are installed after cleaning and processing the surface; and repeating the processes 3-12 times which cool wafers for 3-10 seconds and heat them with 900-1,000 centigrades for 3-10 seconds per each period as supplying oxygen to the contacted wafers.