| 摘要 |
PURPOSE: To shorten the construction period by starting to form an LSI chip on a semiconductor substrate from the lower layer and, at the same time, by forming a wiring layer for an upper layer on another substrate in a form of upper and lower layers replaced each other and by bonding together the top surfaces of two substrates thereby creating one LSI chip. CONSTITUTION: An MIS transistor is formed in an ordinary way on an n-type semiconductor substrate 1, a contact hole H is opened, and a contact 10 is formed after giving deposit etching with a wiring material 9. A window W is opened after depositing an insulation film 12 on another semiconductor substrate 11, and a window 13 and a top wiring layer (Al layer) 13 are deposited and patterning is performed. An interlayer insulation film 14 is deposited, region A is opened, and a wiring material 15 is embedded. A contact region S to be joined to the contact 10 formed on the substrate 1 is opened and a wiring material 18 is embedded. Then, both are bonded under pressure in a form of contacting respective top surfaces together, thereby forming an LSI chip. If an ordinary construction period is 1, then the construction period for forming n wiring layers becomes 0.2×n and the construction period becomes (1+0.2n)/2 as n increases thereby shortening the construction period.
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