FABRICATION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: To enhance adhesion of multilayer insulation film being employed, as an interlayer insulation film, in a semiconductor device having multilayer wiring structure. CONSTITUTION: NSG 13 and BPSG 14 are deposited by plasma CVD to form a lower layer insulation film on the surface of a silicon substrate 11. The insulation film is then subjected, on the surface thereof, to plasma processing to form irregularities of several tens to several hundredsÅuniformly. Finally, BPSG 15 is deposited by plasma CVD.