| 摘要 |
PURPOSE: To make it possible prevent a leak current from a first electrode in advance by providing an oxide prevention film between an interlayer oxide film and a first electrode constituting a lower electrode. CONSTITUTION: A silicon nitride film 27 is deposited on an interlayer oxide film 15. Thereafter, a storage node contact hole 16 opened to a sauce/drain region 8 is drilled in the silicon nitride film 27 and interlayer oxide film 25. Next a first electrode layer 21 consisting of polysilicon doped with impurities such as phosphorus is deposited inside the storage node contact hole 16 and on the surface of the silicon nitride film 27. Since the first electrode 21 is formed on the silicon nitride film 27 on the interlayer oxide film 15, a leak current from the first electrode 21 can be prevented in advance by the silicon nitride film 27. |
