| 摘要 |
<p>PURPOSE: To achieve high integration by realizing a select transistor in which the number of contact holes is decreased by eliminating the need of opening a contact hole in a first high resistance polysilicon. CONSTITUTION: The nonvolatile semiconductor memory comprises a select transistor 209 having a floating gate similar to that of a multilayer memory cell 208. Since no contact hole is opened through a first high resistance polysilicon 204, the gate wiring of the select transilstor requires no contact hole to be opened in the way of a cell array. The floating gate 204 is precharged so that the select transistor 209 has a positive threshold or impurities are introduced into the channel region of the select transistor 209 while being controlled to have a positive neutral threshold by UV irradiation.</p> |
