| 摘要 |
PROBLEM TO BE SOLVED: To form a storage electrode with two fins by a method wherein a contact hole is formed by partially etching first and second substance layers, an etching-preventing layer and an insulating layer, and a storage electrode is formed by patterning a first conductive pattern and by etching the second substance layer. SOLUTION: A contact hole 64, with which a substrate 50 is exposed by partially etching a second substance layer 62, a first substance layer 60, an etching-preventing layer 58 and an insulating layer 56, is formed by a photoetching process. After a first conductive layer 66 has been patterned using a mask pattern with which the storage electrode of a capacitor is formed, and a storage electrode pattern 68 is formed by wet etching the second substance layer 62. A second conductive layer 70 is formed on the upper part, the side part and the lower part of the storage electrode pattern 68 and on the upper part of the first substance layer 60, and the second fin of the storage electrode is formed. The storage electrode, having two fins, may be formed by the etching process, with which the contact hole and the storage electrode pattern are formed. |
