| 摘要 |
<p>PURPOSE: To obtain a semiconductor treating jig composed of SiC and metal Si which will not contamine an Si wafer in a heat treating step, etc., by specifying the kind of acids, concn. dip time in the acid and tip time in pure water thereafter when the jig is ultrasonically cleaned. CONSTITUTION: A semiconductor treating jig made of a material composed of SiC and metal Si and having a gas-impermeability is dipped in a water soln. of HF, HF-HC1 or HF-HNO3 of 3-20wt.% concn. for 5min-1hr and ultrasonically cleaned therein. Then, the jig cleaned with the acid is dipped in a pure water for semiconductor use for 10min or more and ultrasonically cleaned. The acid cleaning is preferably, at least, three times with a replaced new acid soln. After completion of the water cleaning, the SiC material must be completely dried in a high-cleanness environment having no fears of deposition of impurities.</p> |
