发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE: To ensure that an Al wiring layer in the periphery of a substrate is not corroded by an alkali developer when a resist after exposure is treated with the alkali developer. CONSTITUTION: A barrier metal film 4 is formed on a substrate 1, the substrate 1 is held on a stage 6 by a clamp ring 5 as if covering the barrier metal film 4 outside an element effective region of the periphery of the substrate 1, an aluminum-containing film 7 is formed on the barrier metal film 4 in the element effective region, the clamp ring 5 is removed from the substrate 1, and a reflection preventing film 8, whose reflectivity is lower than that of the aluminium- containing film 7, is formed as if covering the aluminum-containing film 7.</p>
申请公布号 JPH0878409(A) 申请公布日期 1996.03.22
申请号 JP19940208302 申请日期 1994.09.01
申请人 FUJITSU LTD 发明人 YAMANE SHUICHI
分类号 H01L21/28;H01L21/3205;H01L21/68;H01L21/683;H01L23/52;(IPC1-7):H01L21/320 主分类号 H01L21/28
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