发明名称 NONVOLATILE MEMORY
摘要 PURPOSE: To provide the nonvolatile memory whose internal data can not be decoded or copied with ease in consideration of the protection of data stored in the nonvolatile memory such as a mask ROM. CONSTITUTION: The nonvolatile memory is the read-only mask ROM where fixed data are programmed in the mask of an LSI manufacturing process and consists of a memory array 1, an input circuit 2, an address buffer 3, a sense circuit 4, an output circuit 5, a control signal circuit 6, a signal processing circuit 7 which converts a data output in specific process mode, and a data process signal generating circuit 8; and the signal processing circuit 7 is provided between the sense circuit 4 and output circuit 5, and this signal processing circuit 7 inverts or does not invert the output data from the sense circuit 4 according to a combination of a data process control signal generated by the data process signal generating circuit 8 and an address signal inputted to the input circuit 2.
申请公布号 JPH0877076(A) 申请公布日期 1996.03.22
申请号 JP19940215471 申请日期 1994.09.09
申请人 HITACHI LTD 发明人 MORIUCHI HISAHIRO
分类号 G06F12/14;G06F21/24;G11C17/00;H01L21/8246;H01L27/112 主分类号 G06F12/14
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