| 摘要 |
PURPOSE: To provide a stack-type memory cell which allows small leak current. CONSTITUTION: A contact hole 2 is formed so as to make contact with the edge (bird's beak part) of a field insulation film 52. On the interface between the edge of the field insulation film 52 and a substrate 51, small lattice defects are generated due to stress from the field insulation film 52. If such lattice defects are not generated, stress applied to the substrate 51 from the edge of the field insulation film 52 causes leak current increase. An area of the junction depletion layer that crosses the part whereupon the lattice defect is generated or stress is applied can be reduced and prevent junction leak increase by covering such part with a source/drain area 1. As a result, leak current due to the field insulation film 52 can be reduced. |
