| 摘要 |
<p>PURPOSE: To decrease the number of production processes, to improve the production yield and to decrease the cost. CONSTITUTION: A transparent conductive film 2 and a metal film 3 are continuously deposited on a transparent glass substrate 1 and this two-layer film is patterned to obtain a gate electrode 4 and a pixel electrode 5 covered with the metal film 3 (process a). A gate insulating film 6, a-Si film 7, n<+> type a-Si film 8 are formed and the a-Si films 7, 8 are patterned to be left in an island- state on the gate electrode (process b). The gate insulating film 6 is selectively etched to form an aperture to expose the metal film on the pixel electrode 5 (process c). A metal film of the same material as the metal film 3 is deposited and patterned to form a source electrode 9 and a drain electrode 10 while the metal film 3 exposed in the aperture of the gate insulating film is removed to obtain a transparent display electrode (process d).</p> |
