发明名称 FIELD EFFECT TRANSISTOR, SEMICONDUCTOR SWITCH AND SEMICONDUCTOR PHASE SHIFTER
摘要 PURPOSE: To obtain a device, e.g. a semiconductor switch or a semiconductor phase shifter, in which the size is reduced while enhancing the characteristics. CONSTITUTION: An inductance or a capacitor is provided, in the form of an electrode finger 27 for inductance, between drain(D) and source(S) thus constituting an FET incorporating an inductor or a capacitor. The inductor or capacitor also serves as a part of the electrode of the FET. When this FET is employed in the constitution of a device, e.g. a semiconductor switch or a semiconductor phase shifter, a small-size device excellent in reflection characteristics can be obtained.
申请公布号 JPH0878486(A) 申请公布日期 1996.03.22
申请号 JP19940208827 申请日期 1994.09.01
申请人 MITSUBISHI ELECTRIC CORP 发明人 IYAMA YOSHITADA;INAMI KAZUYOSHI;IIDA AKIO
分类号 H01L21/60;H01L21/822;H01L21/8232;H01L27/04;H01L27/06;H01P1/15;H01P1/185;(IPC1-7):H01L21/60 主分类号 H01L21/60
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