| 摘要 |
PURPOSE: To form a base where a gate is to be buried, by the junction at low temperature of the fellow semiconductor substrates. CONSTITUTION: A recess 42 is provided on the topside 14 of an N<-> --substrate 10. A P<+> layer 12 i made below the N<-> -substrate 10. A P<+> -gate region 52 is made at the bottom of the recess 42 and under its sides. A metallic layer 62 consisting of Au-Sb alloy is made on the downside 22 of the N<+> -substrate 20. Impurities are removed from the N<-> -substrate 10 and the N<+> -substrate 20 by sulfuric acid + hydrogen peroxide aqueous solution, and then they are cleaned in pure water and are dried by spinning. The N<-> -substrate 10 and the N<+> - substrate 20 are joined with each other, being heated at about 350 deg.C in hydrogen atmosphere in the condition that the topside 45 of the projection 44 of the N<-> -substrate 10 and the metallic layer 62 provided at the downside 22 of the N<+> -substrate 20 are in contact with each other.
|
