| 摘要 |
<p>PURPOSE: To surely make a write-in time the shortest always even if parameters are varied by manufacturing conditions or the like. CONSTITUTION: A selection word line voltage supplying circuit 2 is provided with a dummy cell DMC having the same structure and characteristics as a memory cell MC, and also provide with a floating gate potential detection and control circuit 21 in which a floating gate potential of this dummy cell DMC is detected and a control signal CNT set to a low level and set to a high level, when the potential is higher than a voltage resulting from adding a threshold voltage at the time of pinch off to drain voltage of the dummy cell DMC and when the case is other than the above respectively is generated. Selection word line voltage obtained by boosting when the control signal CNT is a high level and stopping boosting when it is a low level is supplied to a word line WL, that is, the control gates of a memory cell MC and the dummy cell DMC by a boosting circuit 22.</p> |
