| 摘要 |
PURPOSE: To conduct anisotropic etching fast and finely by, while dry-etching the perovskite type oxide film in a substrate which is conducted with specified etching gas introduced, applying the substrate with ultrasonic wave. CONSTITUTION: On a wager on which a PZT film 22 is formed on a substrate 21, a photoresist pattern 23 of desired shape is formed. The PZT film 22 is film-formed by reactive sputtering method with normal multi-targets, and, the photoresist pattern 23 is patterned wherein a photoresist coat is patterned by normal photolithography and development process. Then, while the wafer is applied with ultrasonic wave with an ECR plasma etching device, the PZT film 22 is dry-etched. This dry-etching employs acetylcetone as etching gas. With this, fast anisotropic etching of the PZT film 22 in the area not masked with the photo resist pattern 23 is performed. |
