发明名称 SEMICONDUCTOR X-RAY DETECTOR AND X-RAY DETECTION DEVICE
摘要 PURPOSE: To provide a semiconductor X-ray detector which has a signal acquiring electrode in a detector surface. CONSTITUTION: An electric field is applied to a semiconductor X-ray detection part between a gate electrode 104 insulated by an insulation film 102 on a semiconductor substrate 100 wherein a p-type region 101 is formed in a rear and a rear gate electrode 105, an electron-hole pair generated by an X-ray 109 injected to the semiconductor substrate 100 is separated and an electric signal collected to a front side by an inner electric field is acquired by an electrode 106 and an electrode 107. Since an electric signal collected to a front side by an inner electric field of a detector is thereby acquired, capacity of a detector is greatly reduced and feeble X-ray can be measured at high sensitivity and high resolution.
申请公布号 JPH0878718(A) 申请公布日期 1996.03.22
申请号 JP19940212330 申请日期 1994.09.06
申请人 HITACHI LTD 发明人 NISHIDA AKIO;TAKAGUCHI MASANARI;NAKAGAWA KIYOKAZU;SHIMADA JUICHI;KIMURA YOSHINOBU
分类号 G01T1/24;H01L31/09;(IPC1-7):H01L31/09 主分类号 G01T1/24
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