发明名称 |
SEMICONDUCTOR X-RAY DETECTOR AND X-RAY DETECTION DEVICE |
摘要 |
PURPOSE: To provide a semiconductor X-ray detector which has a signal acquiring electrode in a detector surface. CONSTITUTION: An electric field is applied to a semiconductor X-ray detection part between a gate electrode 104 insulated by an insulation film 102 on a semiconductor substrate 100 wherein a p-type region 101 is formed in a rear and a rear gate electrode 105, an electron-hole pair generated by an X-ray 109 injected to the semiconductor substrate 100 is separated and an electric signal collected to a front side by an inner electric field is acquired by an electrode 106 and an electrode 107. Since an electric signal collected to a front side by an inner electric field of a detector is thereby acquired, capacity of a detector is greatly reduced and feeble X-ray can be measured at high sensitivity and high resolution.
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申请公布号 |
JPH0878718(A) |
申请公布日期 |
1996.03.22 |
申请号 |
JP19940212330 |
申请日期 |
1994.09.06 |
申请人 |
HITACHI LTD |
发明人 |
NISHIDA AKIO;TAKAGUCHI MASANARI;NAKAGAWA KIYOKAZU;SHIMADA JUICHI;KIMURA YOSHINOBU |
分类号 |
G01T1/24;H01L31/09;(IPC1-7):H01L31/09 |
主分类号 |
G01T1/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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