| 摘要 |
PURPOSE: To suppress short channel effect and obtain the highest current driving force possible. CONSTITUTION: This semiconductor device is equipped with a semiconductor substrate 11, a gate insulating film 13a made on the surface of this substrate, a gate electrode 13 made on this gate insulating film, a sidewall insulating film 14 made on the sidewalls of this gate electrode and the gate insulating film, a sidewall conductor film 15 made next to this sidewall insulating film, sidewall conductor films on both sides of the gate electrode, a surface area 16a of the substrate under this sidewall conductor film, and source and drain regions 16 being made in the surface area adjacent to the sidewall conductor film out of the semiconductor substrate. This is so made that the concentration of impurities in the direction of depth of the board whose starting point lies on the surface of the sidewall conductor film shows one maximum value in specified depth, and that it decreases under the specified depth.
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