PHOTOMASK, PATTERN FORMING METHOD AND PRODUCTION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: To produce a photomask with which decrease in the production yield due to defective resolution can be prevented and which is capable of forming a fine pattern. CONSTITUTION: The phase difference between light beams transmitting through respective areas of a translucent film 2, a translucent area of a phase shifer 3 and a main pattern 4 made of a transparent area is substantially made 180 deg.. A transparent auxiliary pattern 5 having the same phase difference for transmitting light as that of the main pattern is formed around the main pattern 4. The distance D between centers or desired center lines of the main pattern and the auxiliary pattern is determined to satisfy the relation of D=bλ/NA, wherein NA is the numerical aperture on the mask side of the projecting optical system,λis the wavelength of exposure light, and b is a const. ranging 1.35