| 摘要 |
PROBLEM TO BE SOLVED: To isolate an adjacent monolithic integrated electronic element and a photoelectronic element by a method, wherein at least a channel is formed on the dielectric strip corresponding to an electrically controllable element on a cap layer of a conductive semiconductor material on an optical element and a semiconductor material layer. SOLUTION: An InP buffer layer 14 is grown for the manufacture of the optical element such as an optical amplifier, a first barrier 16 for an InP buffer layer 14 is formed, and the p<-> InP layer 19 of the first conductivity type compound semiconductor material is grown on the surface of a second barrier 20. Subsequently, a semiconductor layer 24 is grown on a region other than the upper part of a cross section 22 of the optical amplifier, an isolated strip 26 is deposited on the surface of the corresponding semi-insulating region 24 between the adjacent amplifier cross section 22. The isolation of the dielectric between the adjacent optical amplifier elements is conducted by the growth of SiO2 strip 26 on the surface of the semi-insulating region 22, and the cap layer 28 of a p<+> InP heavily-doped compound semiconductor material is regrown on the outer surface of the optical amplifier and the semiconductor region 24.
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