| 摘要 |
PROBLEM TO BE SOLVED: To virtually prevent the diode effect generated by the channels of p-type and n-type devices by providing a conductive region in a complementary device. SOLUTION: A tungsten silicide layer 27 of conductive material is arranged between transistors 17 and 18, instead of an n-type polysilicon layer which has been before. The p-n junction, which is generated by the drain of the p-type transistor 17 and the polysilicon layer, can be removed by the WSi2 layer 27 using the drain of a drive transistor as the drain of a pull-down transistor, and at the same time, the formation of the p-n junction can be prevented. Accordingly, the effect of diode can be removed without substantially deviating from the ordinary manufacturing process, while the high-speed property and the high density characteristic of a TFT are being utilized.
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