MANUFACTURING PROCESS OF SEMICONDUCTOR DEVICE

摘要

forming a first conduction layer having irregular surface on a substrate; forming a first conduction pattern by etching the first conduction layer; forming an insulation film thereon; forming a mask pattern for etching by etching-back the insulation film; and partially etching the first conduction pattern using the etching mask. Formation of a storage electrode with a micro trench enhances cell capacitance.