发明名称 |
MANUFACTURING PROCESS OF METAL ALLOY USING PLASMA ANNEALING PROCESS |
摘要 |
The metal alloy prodn. method for lowering a metal contact resistance in semiconductor element manufacturing process, comprises annealing the metal at 400 deg.C under NH3 gas atmosphere with generation of hydrogen composition by resolving NH3 molecule with plasma. The method increases reliability of semiconductor element, and the manufacturing process of semiconductor device is simplified.
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申请公布号 |
KR960003762(B1) |
申请公布日期 |
1996.03.22 |
申请号 |
KR19920027045 |
申请日期 |
1992.12.31 |
申请人 |
HYUNDAI ELECTRONICS IND. CO., LTD. |
发明人 |
AHN, HEE - BOK;JIN, BYUNG - JOO;LEE, SANG - SUN;PARK, YUN - SOO |
分类号 |
H01L21/324;(IPC1-7):H01L21/324 |
主分类号 |
H01L21/324 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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