发明名称 METHOD OF RELATIVELY POSITIONING PROJECTING MASK AND SEMICONDUCTOR WAFER
摘要 In the illustrative disclosure, alignment of x-ray masks, with elements in the submicron range for x-ray lithographic replication, is carried out with the use of through-bores in the set of masks and in the substrates. A single point x-ray source may be used to produce widely offset parallel beams defining the bore alignment axes, or the bores may be formed with oblique axes converging at a point, so as to be usable with diverging x-ray beams from a point x-ray source.
申请公布号 JPS53144681(A) 申请公布日期 1978.12.16
申请号 JP19780058671 申请日期 1978.05.17
申请人 SIEMENS AG 发明人 PEETAA TEITSUSHIYAA;ETSUKARUTO FUNTO
分类号 H01L21/027;G03F9/00 主分类号 H01L21/027
代理机构 代理人
主权项
地址