| 摘要 |
<p>A thermal head is provided with a supporting substrate, a glaze layer formed on the substrate, heating resistor which is formed on the glaze layer and made of Si and O and the rest being substantially composed of a metal, and electrodes connected to the heating resistor. The heating resistor has an unpaired electron density of 1 x 1019/cm3. In addition, the reaction layer formed by reaction of the glaze layer and the heating resistor is formed between the glaze layer and resistor.</p> |
