| 摘要 |
PURPOSE:To increase the length of a resistance by providing a load resistance made of a polycrystalline silicon formed of a multilayer through insulating films, contacting to sequentially connect the resistance layers in series through a connecting hole formed in the films with each other. CONSTITUTION:A transistor 3, a transistor gate 1 connected to the transistor 3 and a load resistance 2 are formed on a substrate 13, the gate 1 and the gate 4 of the transistor 3 are formed of a polycrystalline silicon doped in high concentration, and the resistance 2 is formed of a polycrystalline silicon doped in low concentration, and an insulating film 7 is interposed therebetween. A load resistance 5 of one layer is formed of a polycrystalline silicon doped in low concentration through an insulating film 8 on the resistance 2, and the end opposite to the connecting end of the gate 1 of the resistance 2 is contacted with the extension of the resistance 5 filled in a contact hole 10. The end of the resistance 5 is contacted with wirings 12 formed in the hole 11. Thus, even if an impurity is diffused from the gate 1, the length of the load resistance can be sufficiently increased to enhance the integration. |
