Verfahren zur Herstellung einer Halbleiteranordnung durch Wire-bonding.

摘要

A semiconductor device includes a first frame (10) having a bed (12), a semiconductor chip (20) mounted on the bed (12) and having a bonding pad (22), a second frame (30) having an inner lead located above the semiconductor chip (20), a bonding wire (40) connecting the bonding pad (22) of the semiconductor chip (20) to the tip end (34) of the inner lead (32), and a shock-absorbing layer (50) which is adhered at least to that surface portion of the tip end (34) of the inner lead (32) which faces the semiconductor chip (20).