发明名称 Verfahren zur Herstellung eines aktiven Matrixsubstrats.
摘要 Disclosed is a method for fabricating an active matrix substrate for forming constituent elements such as semiconductor layer, passivation layer, electrode material and other elements, by using a photo resist exposed from the substrate back side, using the gate electrode pattern made of opaque material on a transparent substrate as the mask. This method contributes to lower the cost and improve the performance of devices.
申请公布号 DE68923727(T2) 申请公布日期 1996.03.21
申请号 DE1989623727T 申请日期 1989.04.18
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD., KADOMA, OSAKA, JP 发明人 MIYATA, YUTAKA, HIRAKATA OSAKA, JP;KAWAMURA, TETSUYA, KYOTO 605, JP;TSUTSU, HIROSHI, OSAKA 534, JP
分类号 G02F1/136;G02F1/1368;G09F9/30;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/78;H01L29/786;(IPC1-7):G02F1/133 主分类号 G02F1/136
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