| 摘要 |
<p>A metal semiconductor field-effect transistor (MESFET) is disclosed that exhibits reduced source resistance and higher operating frequencies. The MESFET comprises an epitaxial layer of silicon carbide and a gate trench in the epitaxial layer that exposes a silicon carbide gate surface between two respective trench edges. A gate contact is made to the gate surface and with the trench further defines the source and drain regions of the transistor. Respective ohmic metal layers form ohmic contacts on the source and drain regions of the epitaxial layer, and the edges of the metal layers at the trench are specifically aligned with the edges of the epitaxial layer at the trench.</p> |
