SEMICONDUCTOR DEVICE

摘要

A semiconductor device which can drive a large-capacitance load such as the wiring existing in a very large scale integrated circuit chip or a circuit outside the chip. In a circuit in which at least a pair of NMOS and PMOS transistors whose source electrodes are connected to each other, a bias having a higher potential than the bias given to the drain electrode of the PMOS is given to the drain electrode of the NMOS, the mutually connected source electrodes are connected to the input of a CMOS inverter, and a capacitive load is connected to the output of the CMOS inverter, the magnitude of the capacitive load is larger than the gate input capacitance of the CMOS inverter, and the gate input capacitance of the CMOS inverter is larger than the sum of the gate input capacitances of the NMOS and PMOS transistors.