Verfahren zur Bildung einer Germanium-Schicht und durch diese Schicht hergestellter Heteroübergangs-Bipolartransistor.,申请号DE1990622832T-传众专利搜索

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发明名称	Verfahren zur Bildung einer Germanium-Schicht und durch diese Schicht hergestellter Heteroübergangs-Bipolartransistor.
摘要
申请公布号	DE69022832(T2)	申请公布日期	1996.03.21
申请号	DE1990622832T	申请日期	1990.12.18
申请人	TEXAS INSTRUMENTS INC., DALLAS, TEX., US	发明人	VERRET, DOUGLAS P., SUGAR LAND, TEXAS 77478, US;BEAN, KENNETH E., CELINA, TEXAS 75009, US
分类号	H01L21/20;H01L21/316;H01L21/331;H01L29/737;(IPC1-7):H01L21/331;H01L29/73;H01L29/161	主分类号	H01L21/20
代理机构		代理人
主权项
地址

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