FLASH EPROM INTEGRATED CIRCUIT ARCHITECTURE

摘要

Contactless flash EPROM cell and array designs, and methods for fabricating the same result in a dense, segmentable flash EPROM chip. The flash EPROM cell (75-1, 75-n, 76-1, 76-n) is based on a drain-source-drain configuration, in which the single source diffusion is shared by two columns of transistors. The module includes a memory array having at least M rows and two N columns of flash EPROM cells. M word lines (WL1-WLN), each coupled to the flash EPROM cells in one of the M rows of the flash EPROM cells, and N global bit lines (83, 84) are included. Data in and out circuitry is coupled to the N global bit lines which provide for reading and writing data in the memory array.