| 摘要 |
The NAND type memory is mfd. by (a) depositing a gate oxide, an electroconductive layer for a gate electrode. and a nitride film on the semiconductor substrate in order, and etching the nitride film and electroconductive layer by the mask etching process to form a gate electrode, (b) forming an oxide spacer on the side wall of the electrode, and forming a n+ region for a source/drain, (c) forming a contact pad and a connect pad, (d) removing a photoresist pattern, forming an oxide layer and forming a bit line contact hole, and (e) depositing a metal layer for a bit line.
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