METHOD FOR FORMING A METALLINE OF A DEVICE BY CVD

摘要

forming oxide layer(2) on a Si substrate(1); photo-etching the oxide layer; forming a nucleation sites by implanting Si ion on the oxide layer of the portion on which a metal line layer is being formed, to lay a mask(6) having a exposed hole of pattern according with pattern of metal line; and forming the metal line just on the nucleation sites by removing mask and depositing metal layer(7) by chemical vapor deposition.