发明名称 Josephson device having an overlayer structure with improved thermal stability
摘要 <p>A Josephson device comprises a first electrode layer (2) of a superconducting material and containing Nb therein as a constituent element, an overlayer (3) of a nitride of a refractory metal element provided on the first electrode layer, a barrier layer (4) of an insulating compound that contains the refractory metal element as a constituent element and acting as a barrier of a Josephson junction, the barrier layer being provided on the overlayer, and a second electrode layer (5) of a superconducting material and containing Nb therein as a constituent element, the second electrode layer being provided on the barrier layer. <IMAGE></p>
申请公布号 EP0476651(B1) 申请公布日期 1996.03.20
申请号 EP19910115941 申请日期 1991.09.19
申请人 FUJITSU LIMITED 发明人 MOROHASHI, SHINICHI
分类号 H01L39/22;(IPC1-7):H01L39/22;H01L39/24 主分类号 H01L39/22
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