发明名称 Integrated circuit interconnection technique
摘要 <p>Interconnection of each of a plurality of bond sites (14) on a semiconductor chip (10) to a corresponding one of a plurality of metallized areas (16) on a substrate (12) is accomplished via a sheet of anisotropically conductive material (18) sandwiched therebetween. The anisotropically conductive material advantageously has a cutout (24) therein located to expose at least a portion of the substrate lying between a pair of metallized areas (16). The cutout (24) serves to confine a quantity of adhesive (26) deposited therein which serves to secure the chip to the substrate without any physical bond between the metallized areas and the bond sites on the chip while maintaining the anisotropically conductive material in compression. <IMAGE></p>
申请公布号 EP0521672(B1) 申请公布日期 1996.03.20
申请号 EP19920305936 申请日期 1992.06.26
申请人 AT&T CORP. 发明人 SCHOENTHALER, DAVID
分类号 H01L21/52;H01L21/60;H01L21/768;H01L23/498;H01R13/24;H05K3/30;H05K3/32;H05K7/14;H05K13/04;(IPC1-7):H01L21/60;H01R4/04;H05K1/18 主分类号 H01L21/52
代理机构 代理人
主权项
地址