发明名称 |
Dry etching method |
摘要 |
A semiconductor material to be etched is held in a reaction chamber at a predetermined temperature. A reactive etching gas such as a chlorine gas is introduced into the reaction chamber for a first period of time. Thereafter, the reaction chamber is evacuated for a second period of time, and ultraviolet radiation is applied to the semiconductor material for a third period of time within the second period of time for thereby etching the semiconductor material to a depth on the order of a molecular or atomic layer.
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申请公布号 |
US5500079(A) |
申请公布日期 |
1996.03.19 |
申请号 |
US19940237417 |
申请日期 |
1994.05.03 |
申请人 |
RESEARCH DEVELOPMENT CORPORATION OF JAPAN |
发明人 |
NISHIZAWA, JUN-ICHI;YAMAMOTO, KENJI |
分类号 |
H01L21/302;H01L21/203;H01L21/268;H01L21/306;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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