| 摘要 |
A method for fabricating an 8-beam bridge-type silicon acceleration sensor comprises the steps of: growing a silicon oxide layer on the top surface of the silicon substrate; forming an n+ diffusion region in the substrate by successively performing the process of opening a diffusion window in the silicon oxide layer, implanting n+ impurities in the silicon substrate through the diffusion window, and evenly diffusing the n+ impurities into the substrate; removing the silicon oxide layer, and then growing an epitaxial layer thereon; forming a plurality of piezo-resistors in the epitaxial layer by successively performing the process of growing an oxide layer on the epitaxial layer, implanting impurities, and then evenly diffusing the impurities; removing the silicon oxide layer; forming a porous silicon layer from the n+ diffusion region by performing an anodic reaction in HF solution; loading a mass on the epitaxial layer; and, forming an air-gap in the substrate by etching the porous silicon layer.
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