发明名称 |
Integrated semiconductor device with temperature sensing circuit and method for operating same |
摘要 |
A two-way conductive directional circuit formed in a polycrystalline silicon layer separated by an insulation film from a semiconductive element is one-way biased for sensing a temperature of the semiconductive element. The directional circuit may be provided with a bias in either conductive direction thereof for sensing a temperature of the semiconductive element, before being provided with a bias in the other conductive direction thereof for sensing the temperature of the semiconductive element.
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申请公布号 |
US5500547(A) |
申请公布日期 |
1996.03.19 |
申请号 |
US19940364240 |
申请日期 |
1994.12.27 |
申请人 |
NEC CORPORATION |
发明人 |
YAMAGUCHI, KAZUMI;SAWADA, MASAMI;YAMADA, MANABU;HAGIMOTO, KEIZO |
分类号 |
H01L27/04;H01L21/822;H01L27/02;H01L29/78;(IPC1-7):H01L31/058 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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