发明名称 Integrated semiconductor device with temperature sensing circuit and method for operating same
摘要 A two-way conductive directional circuit formed in a polycrystalline silicon layer separated by an insulation film from a semiconductive element is one-way biased for sensing a temperature of the semiconductive element. The directional circuit may be provided with a bias in either conductive direction thereof for sensing a temperature of the semiconductive element, before being provided with a bias in the other conductive direction thereof for sensing the temperature of the semiconductive element.
申请公布号 US5500547(A) 申请公布日期 1996.03.19
申请号 US19940364240 申请日期 1994.12.27
申请人 NEC CORPORATION 发明人 YAMAGUCHI, KAZUMI;SAWADA, MASAMI;YAMADA, MANABU;HAGIMOTO, KEIZO
分类号 H01L27/04;H01L21/822;H01L27/02;H01L29/78;(IPC1-7):H01L31/058 主分类号 H01L27/04
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