Uniform tungsten silicide films produced by chemical vapor deposition

摘要

A tungsten silicide film is deposited from WF6 and SiCl2H2 onto a substrate so that the tungsten to silicon ratio is substantially uniform through the thickness of the WSix film, and the WSix film is substantially free of fluorine. The film can be deposited by a multi-stage process where the pressure in the chamber is varied, or by a high temperature, high pressure deposition process in a plasma cleaned deposition chamber. Preferably the SiCl2H2 and the WF6 are mixed upstream of the deposition chamber. A seeding gas can be added to the process gases.