PRODUCTION OF SILICON SINGLE CRYSTAL AND QUARTZ GLASS CRUCIBLE USED THEREFOR

摘要

PURPOSE: To prevent the OSF secular change of a silicon single crystal by Czochralski method. CONSTITUTION: A quartz glass crucible is formed so that the Al concn. in the depth direction from the internal surface is 40-500ppmw in average concn. from the internal surface to 30μm depth, <40ppmw in average concn from 30μm to 1mm and the Cu concn. from the internal surface to the external surface is <=0.5ppmw and a N-type silicon single crystal is pulled up by using the crucible by Czochralski method. And when a quartz glass crucible formed so that the Al concn. in the depth direction is <40ppmw in average concn. from the internal surface to 30μm depth is used, Al is doped to produce a silicon single crystal having the same Al concn. as the case that the quartz glass crucible is used.