Magnetoresistance effect element

摘要

A magnetoresistance effect element includes a multilayer stack of alternating magnetic and nonmagnetic layers, and having a mixture layer constituted by a mixture of a ferromagnetic element and a non-ferromagnetic element interposed between adjacent stacked magnetic and non-magnetic layers so as to exhibit a magnetoresistance effect. The multilayered stack includes at least two magnetic layers, at least two mixture layers, and at least one non-magnetic layer. 2(X1/Xn)/n is larger than 1.1 where n is the number of atomic layers of the mixture layer, X1 is an atomic concentration (%) of the ferromagnetic element of an atomic layer closest to the magnetic layer, and Xn is an atomic concentration (%) of the ferromagnetic element of the n-th atomic layer closest to the non-magnetic layer.