Insulating gate transistor, e.g. MOSFET

摘要

The insulated gate transistor has a channel region (203) of first conductivity-type, made from a first semiconductor. A gate electrode on a second insulating film controls the current flowing through the channel region. A source region (216) of second conductivity-type comprises a second semiconductor. The second semiconductor has a narrower forbidden bandgap than the first semiconductor. The source region is doped with a first impurity element. A second impurity element is doped into the source region to compensate the lattice fault matching in the hetero-junction arrangement, which is formed between the first and second semiconductor.