METHOD OF MANUFACTURING STORAGE NODE FOR SEMICONDUCTOR DEVICE

摘要

forming a field oxide film(3) on a predetermined portion of a silicon substrate(1); forming a gate oxide film(4), a gate electrode(7) and a side wall spacer(5) thereon; depositing a first oxide film(9) on entire surface of resulting structure; forming a contact hole(2) by etching the first oxide film; filling the contact hole by forming a first polysilicon layer(13) on entire surface; forming a second oxide film(15) pattern on the first polysilicon layer; depositing a second polysilicon layer(17) with irregular surface on upper side and side face of the second oxide film pattern; forming an oxide film(19) pattern for core by etching the second oxide film pattern formed below the depression portion of the second polysilicon layer; depositing a third polysilicon layer(21) surrounding the oxide pattern for core on entire surface of resulting structure; exposing the oxide film pattern for core by eliminating the third polysilicon layer; and eliminating the oxide film pattern for core surrounding the third polysilicon layer.