摘要 |
The present invention relates to a method for growing diamond on a diamond substrate by chemical vapor deposition. The inventive method comprises alternatingly contacting at elevated temperature said diamond substrate with a gas having the formula CnXm and then with a gas having the formula ClZp. X and Z each form single bonds with carbon. X and Z also are reactable to form ZX or a derivative thereof. The Z-X bond is stronger than the C-X bond and also is stronger than the C-Z bond. In the formulas, n, m, l, and p are integers. If CnXm and ClZp do not react in the gas phase, then a gas mixture of them can be used to grow diamond instead of the alternating exposure of one and then the other. |
申请人 |
GENERAL ELECTRIC CO., SCHENECTADY, N.Y., US |
发明人 |
FLEISCHER, JAMES FULTON, SCOTIA, NEW YORK 12302, US;ANTHONY, THOMAS RICHARD, SCHENECTADY, NEW YORK 12309, US |