| 发明名称 |
Method of manufacturing an opto-electronic semiconductor device, whereby a semiconductor body having a top layer of GaAs and a subjacent layer comprising InP is etched in a plasma generated in SiCl4, and Ar |
| 摘要 |
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| 申请公布号 |
EP0547694(B1) |
申请公布日期 |
1996.03.13 |
| 申请号 |
EP19920203865 |
申请日期 |
1992.12.10 |
| 申请人 |
PHILIPS ELECTRONICS N.V. |
发明人 |
CHANG, CHANG VOEI JOENG MARIJKE;RIJPERS, JOHANNES CORNELIS NORBERTUS |
| 分类号 |
H01L21/302;H01L21/306;H01L21/3065;H01L33/00;H01S5/00;(IPC1-7):H01L33/00 |
主分类号 |
H01L21/302 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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