发明名称 |
Auto-program circuit for a non-volatile memory device |
摘要 |
<p>An auto-program voltage generator in a non-volatile semiconductor memory is described. The memory has a plurality of floating gate type memory cells, a program circuit for programming selected memory cells, and program verification circuit for verifying whether or not the selected memory cells are successfully programmed. A program voltage is generated by a high voltage generator 10. A trimming circuit 30 detects the level of the program voltage and increases sequentially the program voltage within a predetermined voltage range every time the selected memory cells are not successfully programmed. A comparing circuit 40 compares the detected voltage level with a reference voltage and generates a comparison signal. A high voltage generation control circuit 20 actuates the high voltage generator 10 in response to the comparing signal. In this way, a non-volatile semiconductor memory is provided which is capable of maintaining a uniform threshold voltage of the memory cells to be programmed regardless of variance in operating temperature or power supply voltage. <MATH></p> |
申请公布号 |
EP0701259(A2) |
申请公布日期 |
1996.03.13 |
申请号 |
EP19950114118 |
申请日期 |
1995.09.08 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, JIN-KI;LIM, HYUNG-KYU;LEE, SUNG-SOO |
分类号 |
G11C17/00;G11C16/02;G11C16/06;G11C16/10;G11C16/30;G11C29/00;G11C29/12;(IPC1-7):G11C16/06 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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