| 摘要 |
<p>In a surface of a silicon substrate (11) of one conductivity type, there are formed a plurality of depressions or recesses (12). Gate regions (13) of opposite conductivity type are formed at bottoms of respective recesses, gate electrodes (14) are provided on respective gate regions, and an electrically conductive block (18) is joined to the surface of the semiconductor substrate. Between the surface of the semiconductor substrate and the electrically conductive block a contact region (19) having a high impurity concentration and/or an electrically conductive material layer may be provided in order to improve electrical and mechanical properties of the contact between the semiconductor substrate and the electrically conductive block. The gate region can have a high impurity concentration and a distance between a channel region and the electrically conductive block can be very small. <MATH></p> |
